LF353MX/NOPB datasheet

Маркировка

LF353MX/NOPB
Производитель

National Semiconductor
Описание

National Semiconductor LF353MX/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 4 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 50pA Current - Output / Channel: - Current - Supply: 3.6mA Current, Input Bias: 50 pA Current, Input Offset: 25 pA Current, Output: 20 mA Current, Supply: 3.6 mA Gain Bandwidth Product: 4MHz Harmonic Distortion: 0.02 % Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Leaded Process Compatible: Yes Mounting Type: Surface Mount Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0?°C ~ 70?°C Output Type: - Package / Case: 8-SOIC (3.9mm Width) Package Type: SOIC-8 Peak Reflow Compatible (260 C): Yes Resistance, Input: 10^12 Ohms Rohs Compliant: Yes Series: BI-FET II?„? Slew Rate: 13 V/?µs Temperature, Operating, Range: 0 to +70 ?°C Voltage - Input Offset: 5000?µV Voltage - Supply, Single/dual (?±): 10 V ~ 36 V, ?±5 V ~ 18 V Voltage, Gain: 100 V/mV Voltage, Input: 10 to 36 V Voltage, Noise: 16 nV/sqrt Hz Voltage, Offset: 5 mV Voltage, Output, High: 13.5 V Voltage, Output, Low: -13.5 V Voltage, Supply: ?±15 V Other Names: LF353MX, LF353MXTR
Количество страниц

4 шт.
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Размер файла

105,14 KB